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A Theoretical Model for Calculating Voltage Sensitivity of Ion Channels and the Application on Kv1.2 Potassium Channel

机译:离子通道电压灵敏度计算的理论模型及其在Kv1.2钾通道上的应用

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摘要

Voltage sensing confers conversion of a change in membrane potential to signaling activities underlying the physiological processes. For an ion channel, voltage sensitivity is usually experimentally measured by fitting electrophysiological data to Boltzmann distributions. In our study, a two-state model of the ion channel and equilibrium statistical mechanics principle were used to test the hypothesis of empirically calculating the overall voltage sensitivity of an ion channel on the basis of its closed and open conformations, and determine the contribution of individual residues to the voltage sensing. We examined the theoretical paradigm by performing experimental measurements with Kv1.2 channel and a series of mutants. The correlation between the calculated values and the experimental values is at respective level, R2 = 0.73. Our report therefore provides in silico prediction of key conformations and has identified additional residues critical for voltage sensing.
机译:电压感测将膜电位的变化转换为生理过程背后的信号传导活动。对于离子通道,通常通过将电生理数据拟合为玻耳兹曼分布来通过实验测量电压灵敏度。在我们的研究中,使用了离子通道的两态模型和平衡统计力学原理来检验假设,以该离子通道的闭合和开放构象为基础,凭经验计算离子通道的整体电压灵敏度,并确定离子通道的贡献。电压检测的单个残留物。我们通过对Kv1.2通道和一系列突变体进行实验测量来检验理论范式。计算值与实验值之间的相关性处于相应水平,R 2 = 0.73。因此,我们的报告提供了关键构象的硅胶预测,并确定了对电压感测至关重要的其他残基。

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