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Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors

机译:基于惠斯通电桥的角度GMR传感器的设计与制作

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摘要

Since the discovery of the giant magnetoresistive (GMR) effect, GMR sensors have gained much attention in last decades due to their high sensitivity, small size, and low cost. The full Wheatstone-bridge-based GMR sensor is most useful in terms of the application point of view. However, its manufacturing process is usually complex. In this paper, we present an efficient and concise approach to fabricate a full Wheatstone-bridge-based angular GMR sensor by depositing one GMR film stack, utilizing simple patterned processes, and a concise post-annealing procedure based on a special layout. The angular GMR sensor is of good linear performance and achieves a sensitivity of 0.112 mV/V/Oe at the annealing temperature of 260 °C in the magnetic field range from −50 to +50 Oe. This work provides a design and method for GMR-sensor manufacturing that is easy for implementation and suitable for mass production.
机译:自从发现巨磁阻(GMR)效应以来,近几十年来,GMR传感器以其高灵敏度,小尺寸和低成本而备受关注。就应用而言,完整的基于惠斯通电桥的GMR传感器最为有用。但是,其制造过程通常很复杂。在本文中,我们提出了一种有效而简洁的方法,该方法通过沉积一个GMR薄膜叠层,利用简单的图案化工艺以及基于特殊布局的简洁的后退火程序来制造完整的基于惠斯通电桥的角度GMR传感器。角度GMR传感器具有良好的线性性能,在-50至+50 Oe的磁场范围内,在260°C的退火温度下,灵敏度为0.112 mV / V / Oe。这项工作为GMR传感器制造提供了一种设计和方法,该设计和方法易于实现且适合批量生产。

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