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Experimental Analysis of Bisbenzocyclobutene Bonded Capacitive Micromachined Ultrasonic Transducers

机译:双苯并环丁烯键合电容式微机械超声换能器的实验分析

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摘要

Experimental measurement results of a 1.75 mm × 1.75 mm footprint area Capacitive Micromachined Ultrasonic Transducer (CMUT) planar array fabricated using a bisbenzocyclobutene (BCB)-based adhesive wafer bonding technique has been presented. The array consists of 40 × 40 square diaphragm CMUT cells with a cavity thickness of 900 nm and supported by 10 µm wide dielectric spacers patterned on a thin layer of BCB. A 150 µm wide one µm thick gold strip has been used as the contact pad for gold wire bonding. The measured resonant frequency of 19.3 MHz using a Polytec™ laser Doppler vibrometer (Polytec™ MSA-500) is in excellent agreement with the 3-D FEA simulation result using IntelliSuite™. An Agilent ENA5061B vector network analyzer (VNA) has been used for impedance measurement and the resonance and anti-resonance values from the imaginary impedance curve were used to determine the electromechanical coupling co-efficient. The measured coupling coefficient of 0.294 at 20 V DC bias exhibits 40% higher transduction efficiency as compared to a measured value published elsewhere for a silicon nitride based CMUT. A white light interferometry method was used to measure the diaphragm deflection profiles at different DC bias. The diaphragm center velocity was measured for different sub-resonant frequencies using a Polytec™ laser Doppler vibrometer that confirms vibration of the diaphragm at different excitation frequencies and bias voltages. Transmit and receive operations of CMUT cells were characterized using a pitch-catch method and a −6 dB fractional bandwidth of 23% was extracted from the received signal in frequency domain. From the measurement, it appears that BCB-based CMUTs offer superior transduction efficiency as compared to silicon nitride or silicon dioxide insulator-based CMUTs, and provide a very uniform deflection profile thus making them a suitable candidate to fabricate highly energy efficient CMUTs.
机译:提出了使用基于双苯并环丁烯(BCB)的粘合晶圆键合技术制造的1.75 mm×1.75 mm占地面积的电容式微加工超声换能器(CMUT)平面阵列的实验测量结果。该阵列由腔室厚度为900 nm的40×40方形隔膜CMUT单元组成,并由在BCB薄层上构图的10 µm宽介电垫片支撑。一条150 µm宽,1 µm厚的金带已用作金线键合的接触垫。使用Polytec™激光多普勒振动计(Polytec™MSA-500)测得的19.3 MHz共振频率与使用IntelliSuite™的3-D FEA仿真结果非常吻合。已使用安捷伦ENA5061B矢量网络分析仪(VNA)进行阻抗测量,并使用来自虚拟阻抗曲线的共振和反共振值来确定机电耦合系数。与在别处发表的基于氮化硅的CMUT的测量值相比,在20 V DC偏压下测得的耦合系数为0.294,表现出40%的高转换效率。使用白光干涉法来测量在不同的直流偏置下的光阑偏转曲线。使用Polytec™激光多普勒振动计测量了不同子谐振频率的振动膜中心速度,该振动计确认了振动膜在不同的激励频率和偏置电压下的振动。使用音调捕获方法对CMUT小区的发送和接收操作进行了表征,并从频域中的接收信号中提取了23%的-6 dB分数带宽。从测量结果看,与氮化硅或二氧化硅绝缘体基CMUT相比,基于BCB的CMUT具有更高的转换效率,并提供非常均匀的挠曲分布,因此使其成为制造高能效CMUT的合适候选者。

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