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Design Characterization and Analysis of a 0.35 μm CMOS SPAD

机译:0.35μmCMOS SPAD的设计表征和分析

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摘要

Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 μm down to 5 μm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD.
机译:有关单光子探测器的大多数作品都依赖于采用专用技术工艺设计的单光子雪崩二极管(SPAD),以实现单光子灵敏度和出色的定时分辨率。取而代之的是,本文着重介绍采用AMS提供的标准0.35微米光电CMOS技术制造的高性能SPAD检测器的实现。我们提出了一系列低噪声SPAD,这些SPAD设计为从20μm到5μm的可变节距。这为整合具有数十微米间距的优化SPAD像素的大型阵列打开了进一步的途径,以便提供高分辨率的单光子成像器。我们通过实验证明,就信噪比而言,20微米SPAD似乎是最相关的检测器,可以使大型SPAD阵列出现。

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