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Double-Grating Displacement Structure for Improving the Light Extraction Efficiency of LEDs

机译:双光栅位移结构提高LED的光提取效率

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摘要

To improve the light extraction efficiency of light-emitting diodes (LEDs), grating patterns were etched on GaN and silver film surfaces. The grating-patterned surface etching enabled the establishment of an LED model with a double-grating displacement structure that is based on the surface plasmon resonance principle. A numerical simulation was conducted using the finite difference time domain method. The influence of different grating periods for GaN surface and silver film thickness on light extraction efficiency was analyzed. The light extraction efficiency of LEDs was highest when the grating period satisfied grating coupling conditions. The wavelength of the highest value was also close to the light wavelength of the medium. The plasmon resonance frequencies on both sides of the silver film were affected by silver film thickness. With increasing film thickness, plasmon resonance frequency tended toward the same value and light extraction efficiency reached its maximum. When the grating period for the GaN surface was 365 nm and the silver film thickness was 390 nm, light extraction efficiency reached a maximum of 55%.
机译:为了提高发光二极管(LED)的光提取效率,在GaN和银膜表面蚀刻了光栅图案。通过光栅图案化的表面蚀刻,可以建立具有基于表面等离子体共振原理的双光栅位移结构的LED模型。使用时域有限差分法进行了数值模拟。分析了不同的光栅周期对GaN表面和银膜厚度对光提取效率的影响。当光栅周期满足光栅耦合条件时,LED的光提取效率最高。最大值的波长也接近介质的光波长。银膜两侧的等离子体共振频率受银膜厚度的影响。随着膜厚度的增加,等离子体激元共振频率趋于相同值,并且光提取效率达到其最大值。当GaN表面的光栅周期为365nm并且银膜厚度为390nm时,光提取效率达到最大55%。

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