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Shear-solvo defect annihilation of diblock copolymer thin films over a large area

机译:大面积二嵌段共聚物薄膜的剪切溶剂缺陷defect没

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摘要

Achieving defect-free block copolymer (BCP) nanopatterns with a long-ranged orientation over a large area remains a persistent challenge, impeding the successful and widespread application of BCP self-assembly. Here, we demonstrate a new experimental strategy for defect annihilation while conserving structural order and enhancing uniformity of nanopatterns. Sequential shear alignment and solvent vapor annealing generate perfectly aligned nanopatterns with a low defect density over centimeter-scale areas, outperforming previous single or sequential combinations of annealing. The enhanced order quality and pattern uniformity were characterized in unprecedented detail via scattering analysis and incorporating new mathematical indices using elaborate image processing algorithms. In addition, using an advanced sampling method combined with a coarse-grained molecular simulation, we found that domain swelling is the driving force for enhanced defect annihilation. The superior quality of large-scale nanopatterns was further confirmed with diffraction and optical properties after metallized patterns, suggesting strong potential for application in optoelectrical devices.
机译:在大面积上实现具有长距离取向的无缺陷嵌段共聚物(BCP)纳米图案仍然是一个持续的挑战,这阻碍了BCP自组装的成功和广泛应用。在这里,我们展示了一种新的实验性策略,用于消除defect灭同时保持结构顺序和增强纳米图案的均匀性。顺序剪切对准和溶剂蒸汽退火可生成完美对准的纳米图案,其纳米级图案在厘米级范围内具有低缺陷密度,优于先前的单个或顺序退火组合。通过散射分析并使用精细的图像处理算法并入新的数学指标,以前所未有的细节描述了增强的定单质量和图案均匀性。此外,使用先进的采样方法与粗粒度分子模拟相结合,我们发现域膨胀是增强缺陷an灭的驱动力。金属化图案后的衍射和光学性能进一步证实了大型纳米图案的卓越品质,表明其在光电器件中的强大应用潜力。

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