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Thermoelectric Properties of Cu2S Doped with P As Sb and Bi—Theoretical and Experimental Studies

机译:掺杂 P、As、Sb 和 Bi 的 Cu2S 的热电性能——理论和实验研究

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摘要

The aim of this work was to investigate the possibility of doping copper sulfide Cu2S with selected fifth-group elements, potentially having a positive effect on the thermoelectric properties of the resulting materials. For the selected model structures, theoretical calculations and an analysis of the electronic structure and changes in the enthalpy of formation due to doping were performed using the WIEN2k package employing the Full-Potential Linearized Augmented Plane Wave (FP-LAPW) method within density functional theory (DFT) formalism. Polycrystalline materials with the nominal composition of Cu32S15X1 (X = P, As, Sb, Bi) were synthesized in quartz ampoules, then sintered using the spark plasma sintering (SPS) technique and “SPS melting” method. The chemical and phase compositions of the obtained sinters were studied by X-Ray diffraction (XRD) and scanning electron microscopy (SEM). Additionally, investigations of thermoelectric properties, i.e., electrical conductivity, Seebeck coefficient and thermal conductivity in the temperature range 300–920 K, were performed. The results of this study indicate that only phosphorus is successfully incorporated into the Cu₂S structure.
机译:这项工作的目的是研究用选定的第五族元素掺杂硫化铜 Cu2S 的可能性,这可能对所得材料的热电性能产生积极影响。对于选定的模型结构,使用 WIEN2k 包进行理论计算,并分析电子结构和掺杂引起的形成焓的变化,采用密度泛函理论 (DFT) 形式中的全电位线性增强平面波 (FP-LAPW) 方法。在石英安瓿瓶中合成了标称成分为 Cu32S15X1(X = P、As、Sb、Bi)的多晶材料,然后使用放电等离子烧结 (SPS) 技术和“SPS 熔融”方法烧结。通过 X 射线衍射 (XRD) 和扫描电子显微镜 (SEM) 研究了所得烧结矿的化学成分和物相组成。此外,还在 300–920 K 的温度范围内进行了热电性能研究,即电导率、塞贝克系数和热导率。这项研究的结果表明,只有磷被成功掺入 Cu₂S 结构中。

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