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Mechanical-Resonance-Enhanced Thin-Film Magnetoelectric Heterostructures for Magnetometers Mechanical Antennas Tunable RF Inductors and Filters

机译:用于磁强计机械天线可调谐射频电感器和滤波器的机械共振增强型薄膜磁电异质结构

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摘要

The strong strain-mediated magnetoelectric (ME) coupling found in thin-film ME heterostructures has attracted an ever-increasing interest and enables realization of a great number of integrated multiferroic devices, such as magnetometers, mechanical antennas, RF tunable inductors and filters. This paper first reviews the thin-film characterization techniques for both piezoelectric and magnetostrictive thin films, which are crucial in determining the strength of the ME coupling. After that, the most recent progress on various integrated multiferroic devices based on thin-film ME heterostructures are presented. In particular, rapid development of thin-film ME magnetometers has been seen over the past few years. These ultra-sensitive magnetometers exhibit extremely low limit of detection (sub-pT/Hz1/2) for low-frequency AC magnetic fields, making them potential candidates for applications of medical diagnostics. Other devices reviewed in this paper include acoustically actuated nanomechanical ME antennas with miniaturized size by 1–2 orders compared to the conventional antenna; integrated RF tunable inductors with a wide operation frequency range; integrated RF tunable bandpass filter with dual H- and E-field tunability. All these integrated multiferroic devices are compact, lightweight, power-efficient, and potentially integrable with current complementary metal oxide semiconductor (CMOS) technology, showing great promise for applications in future biomedical, wireless communication, and reconfigurable electronic systems.
机译:薄膜ME异​​质结构中发现的强应变介导的磁电(ME)耦合引起了人们越来越多的兴趣,并实现了许多集成的多铁性器件,例如磁力计,机械天线,RF可调电感器和滤波器。本文首先回顾了压电和磁致伸缩薄膜的薄膜表征技术,这对于确定ME耦合的强度至关重要。之后,介绍了基于薄膜ME异​​质结构的各种集成多铁性器件的最新进展。特别是在过去的几年中,薄膜ME磁力计得到了快速发展。这些超灵敏磁力计对低频AC磁场的检测极限极低(sub-pT / Hz 1/2 ),使其成为医学诊断应用的潜在候选者。本文研究的其他设备包括声驱动的纳米机械ME天线,与传统天线相比,它们的尺寸缩小了1-2个数量级。具有宽工作频率范围的集成RF可调电感器;集成的R​​F可调带通滤波器,具有双H和E场可调性。所有这些集成的多铁性设备都是紧凑,轻便,省电的,并且有可能与当前的互补金属氧化物半导体(CMOS)技术集成在一起,为在未来的生物医学,无线通信和可重构电子系统中的应用显示出巨大的希望。

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