首页> 美国卫生研究院文献>Materials >First-Principles Investigation of the Adsorption Behaviors of CH2O on BN AlN GaN InN BP and P Monolayers
【2h】

First-Principles Investigation of the Adsorption Behaviors of CH2O on BN AlN GaN InN BP and P Monolayers

机译:CH2O在BNAlNGaNInNBP和P单层上的吸附行为的第一性原理研究

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

CH2O is a common toxic gas molecule that can cause asthma and dermatitis in humans. In this study the adsorption behaviors of the CH2O adsorbed on the boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), boron phosphide (BP), and phosphorus (P) monolayers were investigated using the first-principles method, and potential materials that could be used for detecting CH2O were identified. The gas adsorption energies, charge transfers and electronic properties of the gas adsorption systems have been calculated to study the gas adsorption behaviors of CH2O on these single-layer materials. The electronic characteristics of these materials, except for the BP monolayer, were observed to change after CH2O adsorption. For CH2O on the BN, GaN, BP, and P surfaces, the gas adsorption behaviors were considered to follow a physical trend, whereas CH2O was chemically adsorbed on the AlN and InN monolayers. Given their large gas adsorption energies and high charge transfers, the AlN, GaN, and InN monolayers are potential materials for CH2O detection using the charge transfer mechanism.
机译:CH 2 O是一种常见的有毒气体分子,可引起人类哮喘和皮炎。在这项研究中,研究了CH2O在氮化硼(BN),氮化铝(AlN),氮化镓(GaN),氮化铟(InN),磷化硼(BP)和磷(P)单层上的吸附行为。使用第一原理方法,确定了可用于检测CH2O的潜在材料。计算了气体吸附系统的气体吸附能,电荷转移和电子性质,以研究CH2O在这些单层材料上的气体吸附行为。观察到这些材料的电子特性(除BP单层外)在CH2O吸附后发生了变化。对于BN,GaN,BP和P表面上的CH2O,认为其气体吸附行为遵循物理趋势,而CH2O被化学吸附在AlN和InN单层上。鉴于其巨大的气体吸附能和高电荷转移,AlN,GaN和InN单层是使用电荷转移机制进行CH2O检测的潜在材料。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号