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机译:莫掺杂Aln,GaN和Inn Monolayers的磁性特性与第一原理的比较研究
School of Physics and Microelectronics Hunan University;
School of Physics and Microelectronics Hunan University;
School of Physics and Microelectronics Hunan University;
Department of Physics and Mathematics Hunan Institute of Engineering;
Department of Physics and Mathematics Hunan Institute of Engineering;
AlN; GaN and InN monolayer; First-principles; Electronic structures; Itinerant electrons ferromagnetism;
机译:莫掺杂Aln,GaN和Inn Monolayers的磁性特性与第一原理的比较研究
机译:掺杂1A或2A组非磁性元素的AlN单层的磁性:第一性原理研究
机译:Aln Monolayer的电子和磁性掺杂有一排元素:第一原理研究
机译:静压压力下AlN,GaN和Inn化合物的光学性质的第一原理计算
机译:在宏观和纳米尺度上比较金属-单层-半导体结的电性能。
机译:CH2O在BNAlNGaNInNBP和P单层上的吸附行为的第一性原理研究
机译:第一原理调查CH2O在BN,Aln,GaN,Inn,BP和P单层的吸附行为
机译:alN,GaN和InN的第一性原理计算:体积和合金性质