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Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device

机译:基于Azurin / CdSe-ZnS的生物纳米杂化结构用于纳米级电阻存储设备

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摘要

In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I–V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices.
机译:在本研究中,我们提出了一种通过将氧化还原金属蛋白Azurin与CdSe-ZnS量子点偶联来形成生物纳米杂化体的方法,以开发纳米级电阻存储器件。两种纳米材料之间的共价相互作用可实现牢固有效的结合,从而形成天青蛋白/ CdSe-ZnS杂化物,并能更好地与电极耦合以控制记忆功能特性。进行形态和光学性质以确认杂种形成以及它们的单独组分。在混合纳米结构上的电流-电压(IV)测量显示出朝向记忆功能器件的双稳态电流水平,而这些特性在单个纳米材料上并不明显。杂化物表现出良好的保留特性,具有高稳定性和耐用性,这对于未来的纳米级存储器件而言是有希望的功能。

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