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Effects of Nanosecond Pulsed Electric Fields on theIntracellular Function of HeLa Cells As Revealed by NADH AutofluorescenceMicroscopy

机译:纳秒脉冲电场对半导体的影响NADH自发荧光显示HeLa细胞的细胞内功能显微镜检查

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摘要

The fluorescence lifetime of the endogenous fluorophore of reduced nicotinamide adenine dinucleotide (NADH) in HeLa cells is affected by the application of nanosecond pulsed electric fields (nsPEFs). In this study, we found that after nsPEF application, the fluorescence lifetime became longer and then decreased in a stepwise manner upon further application, irrespective of the pulse width in the range of 10–50 ns. This application time dependence of the NADH fluorescence lifetime is very similar to the time-lapse dependence of the NADH fluorescence lifetime following the addition of an apoptosis inducer, staurosporine. These results, as well as the membrane swelling and blebbing after the application of nsPEFs, indicate that apoptosis is also induced by the application of nsPEFs in HeLa cells. In contrast to the lifetime, the fluorescence intensity remarkably depended on the pulse width of the applied nsPEF. When the pulse width was as large as 50 ns, the intensity monotonically increased and was distributed over the entire cell as the application duration became longer. Asthe pulse width of the applied electric field became smaller, themagnitude of the field-induced increase in NADH fluorescence intensitydecreased; the intensity was reduced by the electric field when thepulse width was as small as 10 ns. These results suggest that themechanism of electric-field-induced apoptosis depends on the pulsewidth of the applied nsPEF.
机译:还原的烟酰胺腺嘌呤二核苷酸(NADH)在HeLa细胞中的内源性荧光团的荧光寿命受纳秒脉冲电场(nsPEFs)的影响。在这项研究中,我们发现在nsPEF应用后,荧光寿命变长,然后在进一步应用时逐步降低,而不论脉冲宽度在10–50 ns范围内。 NADH荧光寿命的这种应用时间依赖性与添加凋亡诱导剂星形孢菌素后NADH荧光寿命的时间依赖性非常相似。这些结果以及应用nsPEF后的膜肿胀和起泡表明,通过在HeLa细胞中应用nsPEF也诱导了细胞凋亡。与寿命相反,荧光强度明显取决于所施加的nsPEF的脉冲宽度。当脉冲宽度大到50 ns时,强度会单调增加,并且随着施加时间的延长,强度会分布在整个单元中。如施加电场的脉冲宽度变小,场诱导的NADH荧光强度增加幅度减少当电场强度降低时,电场会降低强度脉冲宽度小至10 ns。这些结果表明电场诱导细胞凋亡的机制取决于脉冲所应用的nsPEF的宽度。

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