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Imaging and Tuning Molecular Levels at the Surface of a Gated Graphene Device

机译:在门控石墨烯设备表面成像和调节分子水平

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摘要

Gate-controlled tuning of the charge carrier density in graphene devices provides new opportunities to control the behavior of molecular adsorbates. We have used scanning tunneling microscopy (STM) and spectroscopy (STS) to show how the vibronic electronic levels of 1,3,5-tris(2,2-dicyanovinyl)benzene molecules adsorbed onto a graphene/BN/SiO2 device can be tuned via application of a backgate voltage. The molecules are observed to electronically decouple from the graphene layer, giving rise to well-resolved vibronic states in dI/dV spectroscopy at the single-molecule level. Density functional theory (DFT) and many-body spectral function calculations show that these states arise from molecular orbitals coupled strongly to carbon–hydrogen rocking modes. Application of a back-gate voltage allows switching between different electronic states of the molecules for fixed sample bias.
机译:栅极控制的石墨烯器件中载流子密度的调节为控制分子吸附物的行为提供了新的机会。我们已经使用扫描隧道显微镜(STM)和光谱(STS)来显示如何调节吸附在石墨烯/ BN / SiO2器件上的1,3,5-三(2,2-二氰基乙烯基)苯分子的电子电子能级通过施加背栅电压。观察到分子与石墨烯层发生电子解耦,从而在dI / dV光谱中以单分子水平产生了良好解析的振动态。密度泛函理论(DFT)和多体光谱函数计算表明,这些状态源自与碳氢摇摆模式强烈耦合的分子轨道。背栅电压的施加允许在分子的不同电子状态之间切换,以实现固定的样品偏置。

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