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Counterion-Mediated Ligand Exchange for PbS Colloidal Quantum Dot Superlattices

机译:PbS胶体量子点超晶格的抗衡离子介导的配体交换。

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摘要

In the past years, halide capping became one of the most promising strategies to passivate the surface of colloidal quantum dots (CQDs) in thin films to be used for electronic and optoelectronic device fabrication. This is due to the convenient processing, strong n-type characteristics, and ambient stability of the devices. Here, we investigate the effect of three counterions (ammonium, methylammonium, and tetrabutylammonium) in iodide salts used for treating CQD thin films and shed light on the mechanism of the ligand exchange. We obtain two- and three-dimensional square-packed PbS CQD superlattices with epitaxial merging of nearest neighbor CQDs as a direct outcome of the ligand-exchange reaction and show that the order in the layer can be controlled by the nature of the counterion. Furthermore, we demonstrate that the acidity of the environment plays an important role in the substitution of the carboxylates by iodide ions at the surface of lead chalcogenide quantum dots. Tetrabutylammonium iodide shows lower reactivity compared to methylammonium and ammonium iodide due to the nonacidity of the cation, which eventually leads to higher order but also poorer carrier transport due to incomplete removal of the pristine ligands in the QD thin film. Finally, we show that single-step blade-coating and immersion in a ligand exchange solution such as the one containing methylammonium iodide can be used to fabricate well performing bottom-gate/bottom-contact PbS CQD field effect transistors with record subthreshold swing.
机译:在过去的几年中,卤化物加帽成为钝化用于电子和光电子器件制造的薄膜中的胶体量子点(CQD)表面的最有希望的策略之一。这是由于方便的加工,强大的n型特性和器件的环境稳定性所致。在这里,我们研究了用于处理CQD薄膜的碘盐中三种抗衡离子(铵,甲基铵和四丁基铵)的作用,并阐明了配体交换的机理。我们获得了二维和三维正方形堆积的PbS CQD超晶格,外延合并最近的CQDs作为配体交换反应的直接结果,并表明该层中的顺序可以由抗衡离子的性质控制。此外,我们证明了环境的酸性在硫族化物铅量子点表面上的碘离子取代羧酸盐方面起着重要作用。由于阳离子的非酸性,与甲基铵和碘化铵相比,碘化四丁基铵显示出较低的反应性,由于未完全除去QD薄膜中的原始配体,最终导致较高的阶数,但也导致较差的载流子传输。最后,我们表明,单步叶片涂布和浸入配体交换溶液(例如含有甲基碘化碘的溶液)中,可用于制造性能良好的底栅/底接触PbS CQD场效应晶体管,并记录下阈值摆幅。

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