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FullyAtomistic Understanding of the Electronic andOptical Properties of a Prototypical Doped Charge-Transfer Interface

机译:完全对电子和原子的原子理解原型掺杂电荷转移接口的光学性质

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摘要

The current study generates profound atomistic insights into doping-induced changes of the optical and electronic properties of the prototypical PTCDA/Ag(111) interface. For doping K atoms are used, as KxPTCDA/Ag(111) has the distinct advantage of forming well-defined stoichiometric phases. To arrive at a conclusive, unambiguous, and fully atomistic understanding of the interface properties, we combine state-of-the-art density-functional theory calculations with optical differential reflectance data, photoelectron spectra, and X-ray standing wave measurements. In combination with the full structural characterization of the KxPTCDA/Ag(111) interface by low-energy electron diffraction and scanning tunneling microscopy experiments (ACS Nano>2016, 10, 2365–2374), the present comprehensive study provides access to a fully characterized reference system for a well-defined metal–organic interface in the presence of dopant atoms, which can serve as an ideal benchmark for future research and applications. The combination of the employed complementary techniques allows us to understand the peculiarities of the optical spectra ofK2PTCDA/Ag(111) and their counterintuitive similarity tothose of neutral PTCDA layers. They also clearly describe the transitionfrom a metallic character of the (pristine) adsorbed PTCDA layer onAg(111) to a semiconducting state upon doping, which is the oppositeof the effect (degenerate) doping usually has on semiconducting materials.All experimental and theoretical efforts also unanimously reveal areduced electronic coupling between the adsorbate and the substrate,which goes hand in hand with an increasing adsorption distance ofthe PTCDA molecules caused by a bending of their carboxylic oxygensaway from the substrate and toward the potassium atoms.
机译:当前的研究对原型PTCDA / Ag(111)界面的光学和电子性质的掺杂引起的变化产生了深刻的原子论见解。对于掺杂,使用K原子,因为KxPTCDA / Ag(111)具有形成明确定义的化学计量相的独特优势。为了对界面特性有一个决定性,明确和完全原子的了解,我们将最新的密度泛函理论计算与光微分反射率数据,光电子能谱和X射线驻波测量相结合。结合通过低能电子衍射和扫描隧道显微镜实验(ACS Nano > 2016 ,10,2365–2374)对KxPTCDA / Ag(111)界面进行完整的结构表征,本综合研究在存在掺杂原子的情况下,可以访问定义完善的金属-有机界面的完全特征化的参考系统,这可以作为将来研究和应用的理想基准。所采用的互补技术的结合使我们能够了解光谱的独特性。K2PTCDA / Ag(111)及其与直觉的相似性中性PTCDA层的那些。他们还清楚地描述了过渡(原始)吸附的PTCDA层的金属特性Ag(111)掺杂后变为半导体状态,相反(简并)掺杂对半导体材料的影响。所有实验和理论上的努力也一致揭示了减少了被吸附物和底物之间的电子耦合,与增加的吸附距离并驾齐驱PTCDA分子由于其羧基氧的弯曲而产生远离底物并朝向钾原子。

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