玻璃-PDMS微流控芯片的电渗性能研究

摘要

以玻璃为基片的微流控芯片在制造上存在工艺复杂、加工周期长、成本高等问题。实验以载玻片和PDMS为原材料，采用湿法刻蚀和浇筑的方法在玻璃和PDMS上制备出较佳结构的微沟道，并分别与PDMS和玻璃不可逆封接，获得了玻璃-PDMS（沟道在玻璃上，A.玻璃-PDMS）、玻璃-PDMS（沟道在PDMS上，B.玻璃-PDMS）两种芯片。对A.玻璃-PDMS、B.玻璃-PDMS两种芯片进行了伏安特性研究，得出芯片的线性伏安特性的最高电压分别为1990 V、1050 V，此时所对应的场强分别为499 V·cm-1、263 V·cm-1。利用电流监测对芯片的电渗性能进行分析，发现电渗流速度随缓冲溶液pH值的升高而增大，表面活性剂SDS的添加能显著提高电渗速度的大小和稳定性。%Manufacturing of microfluidic chip based on glass has many problems like complex craft,long-term pro-cessing cycle and high cost. This experiment improves these problems with glass and PDMS as raw materials,makes well-structured micro-channels on the glass and PDMS in the way of wet corrosion,and obtains two chips by irreversible seal-ing. In the research,glass/PDMS chip(channel in the glass)and glass/PDMS chip(channel in PDMS)are made and stud-ied their volt-ampere characteristics. It is concluded that the highest voltage of the chip linear volt-ampere characteristics are 1 990 V,1 050 V,respectively,in accordance with the field strength of 499 V·cm-1and 263 V·cm-1. The electro-os-mosis properties of microfluidic chips are analyzed by the method of current monitoring,whereby it is found that the elec-tric seepage velocity grows with the increase of buffer solution pH and adding surfactant SDS can dramatically raise the velocity and stability of the electro-osmotic.