Cu and As were separated and recovered from copper electrolyte by multiple stage electrowinning, reduction with SO2 and evaporative crystallization. Experimental results showed that when the current density was 200 A/m2, the electrolyte temperature was 55 °C, the electrolyte circulation rate was about 10 mL/min and the final Cu concentration was higher than 25.88 g/L, the pure copper cathode was recovered. By adjusting the current density to 100 A/m2 and the electrolyte temperature to 65 °C, the removal rate of As was 18.25%when the Cu concentration decreased from 24.69 g/L to 0.42 g/L. After As(V) in Cu-depleted electrolyte was fully reduced to As(III) by SO2, the resultant solution was subjected to evaporative crystallization, then As2O3 was produced, and the recovery rate of As was 59.76%. The cathodic polarization curves demonstrated that both Cu2+concentration and As(V) affect the limiting current of Cu2+deposition.% 通过分段电积、SO2还原、蒸发结晶使铜电解液中的铜砷得到分离与回收。当电流密度为200 A/m2、电解液温度为55°C、电解液循环速率为10 mL/min、终点铜浓度高于25.88 g/L时，电积得到纯阴极铜。调节电流密度为100 A/m2、电解液温度为65°C、铜离子浓度从24.69 g/L 降至0.42 g/L时，砷的去除率为18.25%。通入SO2将脱铜电解液中的As (V)充分还原为As (III)后，蒸发浓缩还原后液，冷却结晶得到As2O3晶体，砷的回收率为59.76%。阴极极化曲线表明，铜离子浓度和As(V)均影响铜还原的极限电流密度。
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机译：通过多阶段的电解，用SO 2的多级和蒸发结晶从铜电解质中分离并从铜电解质中回收并从铜电解质中回收。实验结果表明，当电流密度为200A / m 2时，电解质温度为55℃，电解质循环速率约为10ml / min，最终Cu浓度高于25.88g / L，纯铜阴极恢复。通过将电流密度调节至100a / m 2和电解液温度至65℃，当Cu浓度从24.69g / l降低至0.42g / L时，去除率为18.25％。在将Cu-Fepleted电解质中完全减少至SO 2之后，将所得溶液蒸发结晶，然后制备As2O 3，恢复率为59.76％。阴极偏振曲线证明了Cu2 +浓度和AS（v）影响Cu2 +沉积的限制电流。％通言分段电阻，SO2还原，批发结晶使电脑中的铜砷得到与与。当电气密度为200a / m2，电孔为55°C，电气均为10 ml / min，终点铜浓度高度25.88 g / l时，电气得到得到阴铜。调节电池为100 a / m2，电气温度为65°C，铜离子浓度从24.69 g / l降至0.42g / l时，砷的去的去除率为18.25％。通入so2将脱铜电脑中的含量为（v）充分还原为（iii）后，蒸发离致后液，冷却结晶得到as2O3繁体，砷阴极得到为59.76％。阴极阴极化曲表表明，铜离子浓度和（v）均影响铜还原的电脑电池密度。
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