Silicon carbide nanowires were prepared by means of sol-gel and carbothermal reduction, with phenolic resin and tetraethoxysilane (TEOS) as carbon source and ethyl-orthosilicate as silicon source, respectively, and zirconium nitrate as catalyst. Then it was characterized by the X-ray diffractometer and the transmission electron microscope. The results showed that nanowires were β - SiC with long and straight structures and smooth surface; ZrO2 served as catalyst in the liquid process under its melting point, which provided beneficial growing point for SiC.%以酚醛树脂为碳源、正硅酸乙酯为硅源、硝酸锆为催化荆,通过溶胶-凝胶法和碳热还原法制备出碳化硅纳米线.用X射线衍射仪和透射电子显微镜进行了表征.结果表明,通过此法制备的碳化硅为β - SiC,具有光滑的表面、长而直的线状结构;氧化锆在低于熔点时也起到液相催化作用,为碳化硅的生长提供有利生长点.
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