紫外线和He—Ne激光诱变产植酸酶黑曲霉菌株的研究

摘要

采用He—Ne激光（波长632nm，功率10mW）和紫外线对植酸酶产生茵黑曲霉Px的孢子和原生质体进行诱变。结果表明：原生质体对紫外线诱变的耐受能力比孢子强，而对He—Ne激光诱变的耐受能力比孢子弱。经诱变后筛选出一株突变菌株L2—2，植酸酶产量为9274IU／mL，是出发菌株的1．51倍，传代实验表明该菌株植酸酶产量稳定。%The protoplasts and spores of the origin strain Px were treated by laser and UV radiation to obtain strain with high phytase activity. Mutant L2-2 was obtained,whose phytase activity was 9274 IU/mL,as 1.51 times as the original strain. A good application and exploitation perspective of this strain was shown.