介质阻挡放电电压对阳极键合材料表面性能的影响

摘要

通过亲水角和表面形貌两个标准,探究了介质阻挡放电电压对低温阳极键合材料性能的影响.实验采用1 mm厚的玻璃片和2 mm厚的氧化铝陶瓷片作为阻挡介质,在放电时间为10 s,放电间隙1.5 mm的放电条件下进行活化.实验表明,放电电压为24 kV时,活化效果较好,此时玻璃片亲水角14.3°,硅片亲水角33.5°,玻璃片粗糙度为0.643 nm,硅片粗糙度0.419 nm.%The effect of dielectric barrier discharge voltage on the properties of low temperature anodic bonding materialswas investigated by two criteria,hydrophilic angle and surface topography.In the experiment,1mm thick glass plate and 2 mm thick alumina ceramic plate were used as the dielectrics,and the activation time is 10 s and discharge gap is 1.5 mm.The experimental results show that the activation effect is best when the voltage is 24 kV,the angle of the glass hydrophilic decrease to 14.53°,the angle of silicon hydrophilic decrease to 30.17°,the roughness of glass decrease to 0.643 nm,roughness of silicon substrate changes to 0.419 nm.