Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

摘要

Two-dimensional（2D） black arsenic phosphorus（b-AsP）, as an alloy of black phosphorus（bP） with arsenic, has attracted great attention because of its outstanding electronic and optical properties,including high carrier mobility, tunable bandgap and in-plane anisotropy. B-AsP has a smaller bandgap（0.15–0.3 eV） than the b-P bandgap（0.3–2.0 eV）, and thus can be used for mid-infrared photodetectors.In addition, both of them can form various van der Waals（vdW） heterojunctions with other 2D materials to realize novel functional optoelectronic devices. Here, we compare the basic characteristics of b-AsP and b-P, including crystal structure, optical properties, band structure, electrical properties and stability, and we summarize the update progress of b-AsP in photo detection, including representatives of phototransistor and photodiode devices. In the last part, the future research directions are discussed.