Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors

摘要

＜正＞Dear editor,CMOS image sensors （CISs） present numerous advantages and have become feasible alternatives for CCDs （charge coupled devices） in satellite imaging system, nuclear industry, and particle detection [1–3]. However, CISs used in these applications are often operated under harsh radiation environments and are susceptible to total ionizing dose （TID） and displacement damage.