冷热探针测半导体导电类型实验研究

摘要

Traditional thermo-needles measurement equipment was made and improved for the distinction of S semiconductor electric conduction type .The previous constant temperature was improved to be variable .The dependence of thermoclectromotive fore on teperature contrast was graphed.The results show that when temperature is below 120℃,thermoelectromotive force is proportional to themperature contrast .The related theoretical analysis was presented.Finally ,a method of measuring Si semiconductor doping concentration was put forward.By conparision with other similar methods,this method's computation is more simple and its measurement equipment is cheaper.%制作并改进了传统的冷热探针测半导体导电类型的实验装置,即使传统冷热探针由原来固定的温度差改进为数值可变的量,作出P、n型硅半导体样品的温差电动势随冷热探针温度差的变化关系,进而测出了样品的导电类型,并且发现温差小于120℃时温差电动势与温差成正比,对上述结果做了理论分析.最后,提出了一种测半导体掺杂浓度的实验测量方法.该测量半导体掺杂浓度的方法与其他测量方法相比计算简单,实验装置造价低廉.