C-axis oriented ZnO films are deposited on polished diamond substrates in various O2/(O2+Ar) ratios using the radio frequency(RF) magnetron sputtering technique and are subsequently annealed in oxygen ambience under the same conditions.Structural,morphologic and electrical properties of ZnO films are characterized by X-ray diffraction(XRD),high-resistance instrument,energy dispersive X-ray spectroscopy(EDS) and scanning electronic microscopy(SEM).As the O2/(O2+Ar) ratio increasing from 1/12 to 5/12,the crystallinity of the as grown ZnO films becomes better and the electrical resistivity increases slowly.After annealing,the ZnO films deposited in O2/(O2+Ar) =1/12 and 3/12 are improved greatly in crystallinity,and their electrical resistivity is enhanced by two orders of magnitude,while those deposited in O2/(O2+Ar) =5/12 are scarcely changed in crystallinity,and their resistivity is only increased by one order.In addition,the ZnO films deposited in O2/(O2+Ar) =3/12 and annealed in oxygen are with the best crystal quality and the highest resistivity.
展开▼
Tianjin Key Laboratory of Film Electronics and Communication Devices,Department of Electronics Information Engineering, Tianjin University of Technology;
