宽频太赫兹减反增透器件研究进展

摘要

介绍了国内外宽频太赫兹减反增透器件的研究进展以及在基于高阻硅衬底的聚苯乙烯上用热压印法制备出的一种减反结构.利用这一减反结构制备出的减反器件的透射率比传统的结构要增加近20%,在基于高阻硅衬底的高折射率纳米复合材料(TiO2-COP)上,经热压印后的减反器件在1.02 THz处的透过率为64.9%.最后简要地介绍了太赫兹减反增透器件的实际应用.%In the THz region high-resistivity silicon,a very common optical component in a terahertz system has a very wide range of applications.Through the introduction of research progress of the terahertz broadband anti-reflection photonic device in recent years both at home and abroad,broadband anti-reflective structure by a hot deformation(the highest transmittance is about 20% more than that of general structure and broadband anti-reflective high-refractive composite(TiO2-COP)and the highest transmittance is 64.9% at 1.02 THz)are respectively studied.Finally,we briefly introduce the practical applications of terahertz broadband anti-reflective photonic device.