长波长垂直腔面发射激光器

摘要

The recent studies of structural properties of long wavelength vertical cavity surfaceemitting lasers (VCSELs) are presented, and the GaInNAs/GaAs VCSELs are also reviewed in detail.Finally,a novel design of a diode-pumped long wavelength vertical-external-cavity surface-emittingsemiconductor laser (DP-VECSESL) with GaInNAs/GaAs multiple quantum wells at 1.3μm as anactive region optically pumped by 980nm diode laser is described. The device design realizes theintegrating diode-pumped lasers with the long wavelength VCSEL structure,featuring the advantagesof the both. The characteristics such as threshold condition and output power are calculated theoretically.%给出了长波长垂直腔面发射激光器的器件结构的发展现状,同时对GaInNAs/GaAs垂直腔面发射激光器进行了详细的介绍.最后,给出了所设计的新型1.3 μ m GaInNAs/GaAs长波长垂直外腔面发射半导体激光器的结构设计,有源区量子阱由980nm半导体激光二极管进行泵浦.这种器件设计实现了激光二极管泵浦与长波长垂直腔面发射激光器的有机结合,同时具有两者的优点.此外,本文还对器件的阈值特性和光输出功率进行了理论计算.