离子注入诱导硅材料发光的研究进展

摘要

阐述了采用离子注入技术在硅晶体(Si)中形成缺陷的发光机制,综述了离子注入诱导硅材料发光的研究进展,包括稀土离子掺入硅晶体形成稀土杂质中心发光,Ⅳ族元素C、Ge离子注入Si/SiO<,2>形成等离子缺陷中心发光,以及B、S、P等常规离子注入硅晶体的缺陷发光,其中重点介绍了Si离子自注入诱导硅材料发光的研究现状,最后展望了硅基材料发光的未来发展.%The luminescence mechanism from defects in ion-implanted silicon (Si) is explained. The progress of luminescence from ion-implanted silicon is reviewed, such as rare-earth ion doped silicon, Ⅳ group C1 、Gel implanted Si/SiO2, as well as B1 、 S+ 、P+ and so on implanted silicor. In addition, self-ion implanted silicon is highlighted. Finally, the development of light-emitting silicon is prospected.