钼屏发射率对泡生法蓝宝石单晶生长影响的数值模拟研究

摘要

泡生法蓝宝石单晶生长过程中,由于生长周期长、温度高,热场中钼屏的物理性质和形状都会发生变化,从而引起炉内温场的变化.通过计算机数值模拟,研究了钼屏发射率发生变化时,泡生法蓝宝石单晶生长中温场、流场的变化.模拟结果表明:随钼屏发射率增加,消耗功率也不断增加；在放肩阶段熔体等温线向下移动,流场也从2个涡流逐渐变成1个涡流；而在等径阶段和收尾阶段,这些变化都不明显.%Due to long growth period and high temperature of sapphire growth process used kyropoulos method,the physical nature and shape of molybdenum in the thermal field will be changed,which cause the change of the temperature field in the furnace.A computer numerical simulation was carried out.As the molybdenum screen emissivity changed,the change of temperature field and flow field were researched.The simulation results show that,the power consumption increased with the increase of molybdenum-screen emissivity.In the shouldering stage melt isotherm moved downward gradually and two vortexes became one vortex.During equal stage and ending stage,these changes were not obvious.