热丝CVD法制备大面积金刚石薄膜基片的变形

摘要

采用热丝CVD法制备的大面积金刚石薄膜存在基片变形严重的问题，通过对热丝CVD设备和沉积工艺进行改进，成功解决了直径76mm、厚度0．4mm硅片的变形问题。结果表明：改进后金刚石薄膜基片的翘曲度为0．296%，比改进前的降低了88．9％；改进后金刚石薄膜的质量及晶粒大小均匀，膜厚不均匀度仅为1．53％，具有优异的大面积均习性。%There is deformation problem in large area diamond thin film substrate prepared by hot filament CVD method, the problem of silicon wafer with diameter of 76 mm and thickness of 0. 4 mm was resolved successfully by improving the equipment of hot filament CVD and the deposition process. The results show that the angularity of the diamond thin film substrate after improvement was 0. 296%, reduced by 88. 9% comparing with before improvement. The quality and grains size of the diamond thin film after improvement was uniform, the unevenness of the thin film thickness was only 1.53%, and excellent uniformity of large area was obtained.