γ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤

摘要

The study of irradiation defects of HgCdTe photovoltaic detectors by ~(60)Co γ has been carried out. The current-voltage measurement method was used to evaluate the irradiation effects. It was obtained that the dark current of detectors at a larger reverse bias has a more obvious correlation with the density of defect centers using the numerical differentiate method. By studying the variation of dark current with the extension of time, it was thought that the transient and permanent irradiation defects existed in HgCdTe photodetectors after γ irradiation. This phenomenon may be applied to infrared detectors which operate in the irradiation condition to lengthen the lifetime of infrared detectors.%利用~(60)Co γ源对碲镉汞光伏探测器进行了辐射损伤研究,通过电流-电压测试方法对器件的辐射效应进行了表征.利用数值微分方法得到器件较大反向偏压下的暗电流与缺陷中心密度的关系更为明显.通过研究辐射停止后器件的暗电流随着时间延长的变化,认为碲镉汞光伏探测器的γ辐射损伤存在暂态损伤和永久损伤.将这一现象进行实际应用,可以延长工作于辐射环境中的红外探测器的使用寿命.