980 nm大功率半导体激光器增透膜的优化设计与制备

摘要

对于大功率半导体激光器，根据其最佳工作点随着和端面反射率相关的阈值电流等参数的变化规律，选择适合的腔面膜反射率系数进行设计。设计并制备三种腔面膜膜系，它们的增透膜在980 nm处反射率系数分别为8％、5％与2％，高反膜反射率系数均为90％。器件封装后分别测试其发光性能，数据显示与未镀膜的激光器相比，镀膜后的激光器在输入15 A电流时，它们的输出功率提高了35．18％～37．35％；它们在其最佳工作点处转换效率提高了25．33％～27．44％；此外高反膜反射率一定时，它们达到最佳工作点所需的电流值随其增透膜反射率系数减小而增大，结果表明优化选取合适的半导体激光器腔面膜膜系进行镀制，可以使半导体激光器在最佳工作点具有更大的输入电流，从而更适合在大功率工作。%For 980 nm high-power semiconductor lasers,suitable reflectivity coefficient of cavity surface films of lasers have been designed.Three kinds of AR-coatings for 980 nm high power semiconductor laser were designed and pre-pared,the reflectivities of AR-coatings are respectively 8%,5% and 2%,while the reflectivities of HR-coatings are all above 90%.After packaging,luminescence properties of the semiconductor lasers were tested.Compared with non coated laser,output power of the coated laser increased by 35.18%-37.35%when the input current is 15 A,and the conversion efficiency increased by 25.33%~27.44% at their optimum operating point.When the reflectivity of HR-coatings of high power semiconductor laser is constant,the input current value of the optimum operating point is in-versely proportional to the reflectivity of HR-coatings.The experimental results show that the semiconductor laser with reasonable cavity surface film can have greater current value at optimum operating point,and this optimized semicon-ductor laser is suitable for high power operation.