As掺杂p型碲镉汞材料的研究进展

摘要

非本征p型掺杂碲镉汞材料可以有效克服少子寿命偏低等问题,提高长波和甚长波红外焦平面器件的性能.本文重点阐述了As掺杂实现p型掺杂的基础性原理,以及在器件方面最新研究进展,为今后As掺杂碲镉汞材料的研究提供依据.%As the extrinsic p-type doped HgCdTe material has the high minority carrier lifetime,it can effectively improve the performance of long wave infrared or very long wave infrared HgCdTe detector.The basic theory of As doped p-type HgCdTe was expounded,and research progress of p-on-n infrared detector was introduced,which provides a certain reference for the research of As doped p-type HgCdTe material.