为提高碘化汞多晶薄膜的气相定向生长效果，文中利用氧化汞和氢碘酸在高纯去离子水中生长了碘化汞籽晶层。配制出了[H g2＋]∶[I-]＝1∶3和1∶6两种不同溶度溶液，研究了溶质浓度对籽晶层生长的影响。采用LEICA-DM2500P偏光显微镜和UB200i生物显微镜研究籽晶层的宏观生长形貌，分析了溶液中碘化汞在衬底表面生长形貌和形成薄膜的过程。研究结果表明：当[H g2＋]∶[I-]＝1∶3时容易形成四方形晶粒，生长形貌受晶体结构因素影响；而[Hg2＋]∶[I-]＝1∶6时容易形成密枝晶，其形貌受分子扩散动力学因素控制。%In order to improve the orientated grow th of HgI2 films in vapor ,polycrystalline HgI2 seed layers were grown on ITO conductive glass in HgO-HI-H2 O by solvent evaporation at constant temperature .Two solutions of different concentrations of [Hg2+ ]∶[I-]=1∶6 and 1∶3 were obtained . Macroscopic morphology of seed layers grown in different concentration solutions was investigated using LEICA DM2500P polarizing microscope and UB200i biological microscope .Formation of seed layers were studied according to molecular diffusion dynamics and crystallography .T he results indicate that tetragonal crystal grain grow s easier in solution of [Hg2+ ]∶[I-]=1∶3 controlled by factors of crystal structure ,w hereas dense branch morphology (DBM ) is more convenient to form in solution of [Hg2+ ]∶[I-]=1∶6 predominated by molecular diffusion dynamics .Discussions about future improvements of growing mercuric iodide seed layers in the HgO-HI-H2 O system are included .
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