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In 、Sn 共掺杂 ZnO 纳米线的制备及其气敏性能研究

     

摘要

In order to improve the gas sensing properties of pure ZnO nanowires ,Zinc oxide nanowires co-doped with In and Sn were synthesized by thermal evaporation method .The morphology ,size and phase structure of In Sn doped ZnO nanowires were characterized by X ray diffraction (XRD) ,electron microscope(SEM) ,and transmission electron microscope(TEM) ,and the ethanol sensing properties have been tested by CGS-1TP intelligent gas sensing analysis system .The results demonstrate :The nanowires consist of single crystalline w urtzite ZnO crystal ,and the average diameter is about 80 nm . The doping In and Sn atomic ratio is 0 .12% and 1 .1% for the In Sn doped ZnO nanowires .The response (Ra/Rg ) of the prepared In Sn doped ZnO nanowires to 400 ppm ethanol at 225 ℃ is about 39 .06 ,with the response and recovery times being about 9 s and 5 s ,respectively .Compared with the pure ZnO nanowires ,the sensitivity of In Sn doped ZnO nanowires enhance 63 .9% ,and the response and recovery times are shorten by 1 s and 2 s respectively .%为了改善纯ZnO纳米线的气敏性能,采用物理蒸发法制备出In、Sn共掺杂的ZnO纳米线,利用XRD、SEM 、T EM 对产物的形貌、结构进行表征,采用CGS-1T P智能气敏分析系统对其进行酒精气敏性能测试.结果表明,制备出的In、Sn共掺杂ZnO纳米线具有六方纤锌矿结构,平均直径约为80 nm ,In元素与Sn元素的掺杂量分别为0.12%和1.1%.在最佳工作温度225℃条件下,对气体浓度为400 ppm的酒精蒸气的灵敏度 S(Ra/Rg )为39.06,响应-恢复时间分别为9 s和5 s ,比同等测试条件下纯ZnO纳米线的灵敏度提高63.9%,响应-恢复时间分别缩短1s和2s.

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