瞬态电压抑制二极管的建模及仿真

摘要

Based on 0.5μm CMOS process,a Transient Voltage Suppressor(TVS) diode is designed. Using the black box theory to build the negative operating character under high voltage and high current of the device,the curve containing the first breakdown point and the second breakdown(hardware failure) point is obtained by Matlab. In order to configure the accuracy of the model, the Silvaco TCAD(Computer Aided Design Technology) device simulation platform is adopted. The curves of two strategies are basically equal. And the model built can predict the electronic characteristic of TVS diode when suppressing transient voltage.%基于0.5μm CMOS工艺，设计瞬态电压抑制(TVS)二极管。利用黑箱理论对该器件在高电压大电流下的反向工作特性建模，在 Matlab 数值模拟工具中利用所建模型仿真，获得了包含一次击穿、二次击穿(硬失效)点的反向 I–U特性曲线；基于 Silvaco TCAD 工艺器件仿真平台，经DC 仿真验证所建模型的准确性。仿真结果表明，2种方法获得的特性曲线基本吻合，本文所建数值模型能够预测 TVS二极管瞬态电压抑制时的电特性。