InP基RTD太赫兹振荡源及其应用研究进展

摘要

紧凑和相干的太赫兹源是太赫兹应用的关键组成,共振隧穿二极管(RTD)是目前振荡频率最高的电子学器件,RTD太赫兹振荡源具有结构紧凑、功耗低、室温工作、有一定输出功率、易集成、覆盖频率较宽等优点.InP基RTD太赫兹振荡源在600 GHz左右的频段内输出功率可达百微瓦量级,可见报道的最高振荡频率为1.92 THz,输出功率0.4 μW.RTD振荡源的输出功率可以通过偏置电压进行直接调制,使得其在高容量短距离的太赫兹通信系统中具有很大的优势.目前,InP基RTD太赫兹振荡源成为太赫兹源领域的研究热点.%Compact and coherent source is a key component for various applications of terahertz(THz) wave. Resonant Tunneling Diode(RTD) has been considered as candidates for THz oscillators under room temperature, because it is the electronic device with the highest oscillating frequency at present. RTD THz oscillation is of great advantages of compact structure, low power consumption, room temperature work, a certain output power, easy integration, wide coverage and so on. The output power of InP-based RTD THz oscillation could reach hundreds micro-watts at around 600 GHz. Up to now, the oscillation frequency is increased up to 1.92 THz with 0.4 μW output power. The output power of RTD oscillators can be directly modulated with bias voltage. Because of this property, the RTD oscillator can be adopted as a compact and simple source for high-capacity wireless communications which is an important application of THz waves. InP-based RTD THz oscillator is attracting more and more research interest currently.