GALERKIN ALTERNATING-DIRECTION METHODS FOR NONRECTANGULAR REGIONS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

摘要

For the transient behavior of a semiconductor device, the modified method of characteristics with alternating-direction finite element procedures for nonrectangular region is put forward. Some techniques, such as calculus of variations, isoparametric transformation, patch approximation, operator-splitting, characteristic method, symmetrical reflection, energy method, negative norm estimate and a prior estimates and techniques, are employed. In the nonrectangular region case, optimal order estimates in L2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.