一种纳安量级的基准电流产生电路的设计

摘要

The reference current source can provide a reliable quiescent current operating point for the circuit and plays a critical role in the high performance of the circuit and system. This paper proposes a temperaturecompensated nanoampere reference current generation circuit based on MOS transistors. It is based on standard 0.18-mm CMOS process design and does not require bipolar transistors and resistors. This paper also analyzes the principle of temperature compensation of the proposed reference current source in detail. The simulation results show that the designed current reference source can stably generate 36.3 nA reference current in the temperature range of -20℃～ 100℃, and the temperature coefficient is 128 ppm/℃. The proposed reference current source circuit has significant application potential in wearable medical chips and systems with limited power consumption.%基准电流源能够为电路提供可靠的静态电流工作点,对电路与系统的高性能工作起到十分关键的作用.本文提出了一种基于MOS晶体管的温度补偿的纳安级参考电流产生电路,基于标准的0.18-mm CMOS工艺设计,且不需要使用双极性晶体管和电阻.详细分析了所提出的基准电流源的温度补偿原理.仿真结果表明,设计的电流基准源能在温度范围-20℃～100℃稳定地产生36.3 nA 基准电流,温度系数为128 ppm/℃.本文提出的基准电流源电路在使用功耗受限的穿戴式医学芯片与系统中具有重大的应用潜力.