镁合金表面电沉积硅烷膜的工艺优化

摘要

为进一步提升常规浸涂硅烷膜的防护效果,采用电化学辅助技术在AZ91D镁合金表面沉积了γ-氨丙基三乙氧基硅烷膜,通过正交试验优化了沉积电位和沉积时间等电沉积的工艺参数,借助点滴试验和E-t曲线评估了硅烷膜的耐蚀性能.结果表明:沉积电位对AZ91D镁合金表面阴极辅助沉积硅烷膜耐蚀性的影响最为显著,最优电沉积工艺参数为沉积电位-1.0 V、沉积时间15 min;随着沉积电位的负移和沉积时间的延长,硅烷膜的耐蚀能力均呈现先上升后下降的变化规律,电沉积硅烷膜对AZ91D镁合金基体的防护能力明显优于常规浸涂硅烷膜.%In order to further improve the protective effect of the conventional silane films on AZ91D magnesium alloy,which was treated in γ-aminopropyltriethoxysilane solution by electrochemical-assisted deposition.The electrodeposition parameters such as deposition potential and deposition time were optimized by orthogonal experiments.The results showed that the deposition potential had the most significant influence on the corrosion resistance of the electrodeposited silane films on AZ91D magnesium alloy.The electrodeposited silane films had the optimum corrosion resistance under the conditions of deposition potential-1.0 V and deposition time 15 min.The corrosion resistance of the electrodeposited silane films increased first and then decreased with the negative shift of deposition potential and the increase of deposition potential and deposition time.The electrodeposited silane films had better protective ability than that under the conventional silane films for AZ91D magnesium alloy.