微波烧结制备ZnO压敏电阻

摘要

ZnO varistors were prepared by microwave sintering.Phase composition,microstructure and electrical properties of the samples were investigated.Experimental results showed that the phase composition after microwave sintering was the same as that prepared by conventional sintering.Average grain size,voltage gradient,leakage current,nonlinear exponent,barrier height and depletion layer width were 2.1μm,2479.1V/mm,6.60μA,22.6,0.88eV,and 16nm,respectively.Uniformity of microwave sintering improved the quality of grain boundary with a better homogeneity and consistency,resulting in improved electrical properties.%采用微波烧结的方法制备出ZnO压敏电阻,并对试样的物相组成、微观形貌和电学性能进行了表征。结果表明,微波烧结制备的ZnO压敏电阻与常规烧结具有相同的物相结构,平均晶粒尺寸为2.1μm;试样的电位梯度、漏电流、非线性系数分别为2 479.1V/mm,6.60μA,22.6;晶界势垒形状尖锐,势垒高度为0.88eV,耗尽层宽度为16nm。与常规绕结ZnO压敏电阻相比,微波烧结过程加热均匀,使试样的微观结构具有较好的一致性,提升了烧结质量,优化了ZnO压敏电阻的电学性能。