首页> 中文期刊> 《半导体学报》 >A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

             

摘要

This paper presents a low-power high-quality CMOS image sensor(CIS)using 1.5 V 4T pinned photodiode(4T-PPD)and dual correlated double sampling(dual-CDS)column-parallel single-slope ADC.A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage 4T-PPD.Dual-CDS is used to reduce random noise and the nonuniformity between columns.Dual-mode counting method is proposed to improve circuit robustness.A prototype sensor was fabricated using a 0.11μm CMOS process.Measurement results show that the lag of the five-finger shaped pixel is reduced by 80%compared with the conventional rectangular pixel,the chip power consumption is only 36 mW,the dynamic range is 67.3 dB,the random noise is only 1.55 e^(-)_(rms),and the figure-of-merit is only 1.98 e^(-)·nJ,thus realizing low-power and high-quality imaging.

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