1200 V碳化硅MOSFET与硅IGBT器件特性对比性研究

摘要

The output characteristic test circuit, leakage current test circuit, double pulse test circuit and Buck converter are set up to study the performance of 1 200 V SiC MOSFET and 1 200 V Si IGBT comparatively. The advantages and disadvantages of SiC MOSFET are analyzed. The analyzed result shows that SiC MOSFET has stable blocking capability at high junction temperature. With its inherently low switching loss, SiC MOSFET is suitable for the high power and high frequency applications. However, considering the modest transconductance and high on-state resistance, SiC MOSFET need to be driven with a higher gate voltage swing (-5~+20 V). SiC MOSFET is sensitive to the parasitic parameters because of fast switching speed.%搭建了输出特性测试电路、漏电流测试电路、双脉冲测试电路和Buck 电路，对1200 V SiC MOSFET和Si IGBT的输出特性、漏电流、开关特性和器件损耗进行了对比研究，分析了SiC MOSFET 的主要优缺点。分析结果表明，SiC MOSFET在高温条件下依然拥有稳定的阻断能力；在同样的工作条件下， SiC MOSFET 损耗更小，适合在高频率、大功率场合下使用；SiC MOSFET的跨导低，导通电阻大，所以门极驱动电压需要比较大的摆幅（-5/+20 V）；由于开关速度很快，SiC MOSFET对线路杂散参数更加敏感。