Indium tin oxide(ITO) thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering.The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 °C for 1 h.The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated,and the results indicate that the as-deposited ITO thin films are amorphous in nature.All samples were crystallized by annealing at 500 °C.As the annealing temperature increases,the predominant orientation shifts from(222)to(400).The carrier concentration decreases initially and then increases when the annealing temperature rises beyond1,000 °C.The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below900 °C.Beyond 900 °C,however,the resistivity of the films increases sharply.The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples(TFTCs).TFTCs annealed at 1,000 °C show improved hightemperature stability and Seebeck coefficients of up to 77.73 μV/°C.
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机译:平成28年度论文赏受赏轮文:Effect of Si/Fe Composition, Substrate Temperature, and Substrate Orientation on the Structure and Magnetic Properties of Fe-Si Alloy Film
机译:Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor