Structural, Optical and Electrical Properties of Li-doped ZnO Thin Films Influenced by Annealing Temperature

摘要

Li-doped Zn O thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of Zn O films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Lidoped Zn O films annealed at 500-600 ℃ and the p type Zn O films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region.