基于CHRT 0.18μm CMOS工艺的5GHz低噪声放大器

摘要

针对5 GHz频段无线局域网通信标准的市场需求,提出了一种基于源端电感退化的低噪声放大器(LNA).设计采用了新加坡特许半导体(CHRT)提供的0.18 μm互补型金属氧化物半导体(CMOS)工艺库,并对设计结果进行了流片测试验证.重点分析了基于源端电感退化的低噪声放大器的关键参数与性能折中,包括输入噪声匹配、密勒效应(miller effect)对噪声性能造成的影响,以及解决方案等在射频低噪声放大器设计中至关重要的因素.研究结果表明,噪声系数(NF)、线性度以及增益等关键指标皆可满足5GHz无线通信的需求；其中噪声系数(NF)在超低功耗条件下(Pcom＜4 mW),可以达到3 dB以下.%Aiming at fulfilling the demand of wireless LAN communication standard,experimental studies on low noise amplifier(LNA) with inductive source degeneration were presented. The design was implemented in CHART 0.18 μm complementary metal-oxide-semiconductor(CMOS) technology. As the key parts of the consideration in a LNA design, the crucial trade-offs of key parameters and performance, including input noise matching, the impact on the performance of noise introduced by miller effect and the solution were carefully taken into consideration. The results indicate that, the key target can satisfy the requirements of wireless communication in 5 GHz range,such as NF,linearity and gain,under the condition of ultra-low power(pcom<4mW) ,the NF is less than 3dB.