图形化ZnO纳米杆的生长与表征

摘要

To obtain ZnO nanorod arrays which have good UV emission characteristics,reports a simple and effective method for fabricating and patterning highly ordered ZnO nanorod arrays on H2-decomposed GaN film,using aqueous solution at low temperatures(105℃). The prepared sam⁃ples were characterized the microstructure and morphology. The effects of hydrogen corrosion treat⁃ment have been studied by comparative experiment. The results show that the H2-decomposed GaN film substrate is conducive to the formation of a dense,uniform,hexagonal pattern of oriented ZnO, which is consistent with the screw dislocation growth mechanism.%为了得到具有较好紫外发射特性的ZnO纳米杆阵列，以氢气腐蚀过的GaN薄膜为衬底，在较低的温度（105°C）下采用水浴法制备图形化ZnO纳米杆阵列。对制备的样品进行结构和形貌表征，并通过对比实验研究氢气腐蚀处理的影响。结果表明，氢气腐蚀过的GaN薄膜衬底，有利于形成致密、均匀、定向排列的ZnO六边形图案，符合螺旋位错驱使的生长机制。