黄铜矿结构CuInS2陶瓷和薄膜的制备及性能研究

摘要

采用固相烧结法,在真空管式炉中于960℃下保温2h,制备得到具有纯黄铜矿结构均匀致密的CuInS2陶瓷,所制备的陶瓷呈现p型导电且导电性能良好.此外,以自制的CuInS2陶瓷为靶材,采用脉冲激光沉积法在c轴取向的蓝宝石单晶衬底上制备得到高质量的外延CuInS2薄膜.XRD分析表明薄膜具有良好的沿(112)方向外延取向性,透射光谱测试分析得到薄膜光学带隙为1.4 eV.%Compact pure-chase CuInS2 ceramics with chalcopyrite structure were sintered at 960℃ for 2 hours in vacuum by conventional solid-state sintering method. All the sintered ceramics show hole conduction with a resistivity around 9 Ωm. Using the home-made ceramic target, high-quality CuInS2 thin films were deposited on single-crystal c-plane sapphire substrates by pulsed laser deposition. The CuInS2 film grew epitaxially on c-plane sapphire with a (112) orientation. The optical bandgap of the CuInS2 film is estimated to be 1. 4 eV, which well matches to the solar spectrum.