Owing to the absence of Cd, Pb, Te and other toxic elements, and the widely tunable fluorescence emission spectra from visible to near infrared light, CuInS2quantum dots (QDs), as a new type of I-III-VI semiconductor mate-rials, have been applied in biological detection and analysis imaging. In this study a fast and low temperature method was proposed to synthesize CuInS2and its ZnS core-shell structure QDs with low toxicity raw materials. The ZnS outer layer suppresses the surface defects to improve the luminescence properties of CuInS2QDs, and further reduces biological toxicity. CuInS2QDs exhibited an obvious emission peak at 530 nm when the molar ratio of Cu:In was 1:1. With the increase of In content, the luminescence peak presents a gradual redshift. After coated with ZnS shell, the luminous intensity of QDs obviously increased and the emission peak red shifted. Further more, when the molar ratio of Cu:Zn was 1:1 and the reflux time was 45 min, the luminescent properties of the synthesized CuInS2/ZnS QDs were optimized. This synthesis method takes the advantages of energy saving, high production efficiency, and excellent environmental friendship, showing wide application potential.%因不含Cd、Pb、Te等有毒元素, 且具有在可见光至近红外光波段可调的发光性能, 铜铟硫(CuInS2)量子点作为一种新型的I-III-VI型三元半导体材料, 广泛应用于分析检测和生物成像等领域.本研究采用一种低毒低温的方法快速合成 CuInS2量子点及其 ZnS 核壳结构量子点, 不仅利用 ZnS 带隙较宽且表面缺陷少的特点, 弥补了CuInS2量子点的劣势, 提高了CuInS2量子点的发光性能; 同时由于低毒性ZnS壳层的包覆, 进一步降低生物毒性.当Cu:In摩尔比为1:1时, CuInS2量子点于530 nm处出现明显的发射峰, 且随着In含量的增加, 发光峰逐渐红移.包覆ZnS壳层后, CuInS2量子点的发光强度明显增大, 且谱峰明显红移.当Cu:Zn比为1:1, 回流时间为45 min时, 合成的CuInS2/ZnS量子点发光性能最优.该合成方法节省能源、生产效率高、绿色环保, 具有较大的应用前景.
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