In this article, the mechanism model of Cu-CMP is studied. A kind of slurry is excogitated, which uses colloidal silica with diameter of 40 ran as abrasives, hydrogen peroxide as oxidant, organic alkali as pH modulator and chelating agent, FA/ O as surfactant. The influences of process conditions, including pressure, flow rate, rotary speed and temperature, etc. ? And polish slurry(H2O2, organic alkali, abrasive particle) on copper polishing rate are investigated. Based on these resuls, the appropriate process conditions and the polish slurry are determined to resolve the dishing that exists in Cu-CMP, and the influence of surfactant on surface roughness is analyzed.%研究了铜化学机械平坦化的模型.通过研究分析,采用40 nm粒径的硅溶胶作为磨料,H2O2作为氧化剂,还包含螯合剂和FA/O表面活性剂作为抛光液.分析了工艺条件(包括压力、流量、转速、温度等)和抛光液(H2O2、有机碱、磨料粒径)对抛光过程的影响.通过实验结果,确定了相应的实验条件和抛光液来解决铜化学机械抛光过程中出现的碟形坑等问题,分析了表面活性剂对表面粗糙度的影响.
展开▼
