提出了利用简化CRLH TL来构造了电单负(ENG)材料和磁单负(MNG)材料的方法,并利用该方法对由三单元电单负(ENG)材料和三单元磁单负(MNG)材料构成的对状结构的隧穿效应进行了仿真,利用其散射参数及相移验证了该结构的隧穿效应的存在及其产生条件.研究结果表明,这种新方法用于单负材料的电磁特性研究具有模型结构简单、等效电路电磁参数少、易于匹配和物理实现、利于集成等优点.%To verify the tunneling properties of matched mu-negative and epsilon-negative (MNG-ENG) pairs, a method where the epsilon-negative and mu-negative materials were constructed using a simplified composite right/left-handed transmission line (SCRLH TL) was proposed. In addition, the tunneling properties of a paired structure composed of 3-cell epsilon-negative (ENG) and 3-cell mu-negative (MNG) materials were simulated using the SCRLH TL method. Its tunneling phenomenon and the conditions to realize tunneling were verified employing S-parameters and a phase shift. The results show that this method has several advantages such as simple structure, fewer equivalent circuit parameters, and easier matching, physical designing, and integrating when used in the simulations of single negative materials.
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